Volume 236
Entire issue: Proceedings of BSTU Issue 3 No.2 - Physics and mathematics. Informatics
PHYSICAL AND MATHEMATICAL SCIENCES |
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MATHEMATICS |
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On the stabilization of hybrid differential-difference systems 5–11 UDC 517.935.2+519.71 Marchenko Vladimir Matveevich, |
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On solving coherent dynamics equations with discrete mathematics method for quantum systems under laser excitation 12–17 UDC 535.35+535.33+517.925+621.373.8 |
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Mathematical competence of the individual is the necessary condition of innovative development of society 18–25 UDC 316.628:316.422 |
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H-controllability of dynamical systems 26–30 UDC 517.977 Krakhotko Valeriy Vasil’yevich, Razmyslovich Georgiy Prokof’yevich, |
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Liquid separation 31–36 UDC 621.928.1 |
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To the question of modal control for one three-dimensional neutral type system in weakly cyclic case 37–41 UDC 517.977 |
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Linear Lie algebras in four-dimensional space 42–47 UDC 512.815.6 |
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PHYSICS |
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Solution of the modified integral equation for potentials of average forces and calculation of phase transition parameters in heterogeneous systems containing crystalline nanoparticles 48–55 UDC 531.19; 538.911 Farafontova Elena Valer’yevna, |
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Composition and damage of silicon with an implanted marker Xe at deposition of titanium in the conditions of ion assistance 56–60 UDC 539.211:539.1.06 |
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COMPUTER SCIENCE AND ENGINEERING SCIENCES |
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MODELLING OF PROCESSES AND MANAGEMENT IN TECHNICAL SYSTEMS |
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Use of nonlinear controllers in cascade regulation systems at simultaneous setting of four parameters 61–68 UDC 681.53 Hryniuk Dzmitry Anatol’yevich, Suhorukova Irina Gennad’yevna, |
General solution for synthesis of deadbeat regulator for arbitrary number of steps 69–75 UDC 681.53 Hryniuk Dzmitry Anatol’yevich, |
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PROCESSING AND TRANSMISSION OF INFORMATION |
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Semantic information centric network model evaluation 76–80 UDC 316.776 |
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BRIEF MESSAGES |
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Measurement of surface recombination velocity in semiconductors using magnetoplasma reflection effect 81–84 UDC 537.633.2 |
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Influence of ion-assisted deposition of metal-containing coatings for hydrogen content in Cr/Si , Ti/Si and Zr/Si structures 85–88 UDC 539.1.06:539.23.234 |