COMPOSITION OF Ti/Si- AND Co/Si-STRUCTURES FORMED ION-ASSISTED DEPOSITION

UDC 539.1.06:539.23.234

  • Tul’ev Valentin Valentinovich − PhD (Physics and Mathematics), Associate Professor, Assistant Professor, the Department of Physics. Belarusian State Technological University (13a, Sverdlova str., 220006, Minsk, Republic of Belarus). E-mail: tvv69@mail.ru

Key words: ion-assisted deposition, silicon, titanium, cobalt, hydrogen, resonant nuclear reaction method.

For citation: Tul’ev V. V. Composition of Ti/Si- and Co/Si-structures formed ion-assisted deposition. Proceedings of BSTU, issue 3, Physics and Mathematics. Informatics, 2022, no. 2 (260), pp. 60–64 (In Russian). DOI: https://doi.org/10.52065/2520-6141-2022-260-2-60-64.

Abstract

The paper discusses experimental results on the study of the distribution of elements in the nearsurface layers of Ti/Si and Co/Si structures formed by vacuum ion-assisted deposition. This method consists in the deposition of a coating on a substrate, during which the surface of the formed structure is irradiated with accelerated ions. The coating deposition time was 2 hours at an accelerating voltage U = 7 kV and an ion current density of ∼4–5 μA/cm2. A vacuum was maintained in the working chamber during the deposition of coatings at a pressure of ~10−2 Pa. The average rate of coating deposition was in the range of 0.2–0.4 nm/min. The ratio Ji / Jа of the flux density Ji of assisting ions to the flux density Jа of neutral atoms was 0.1–0.4, which corresponds to the condition of coating growth on the substrate.

The composition and depth distribution of elements in the formed coatings were studied by the method of Rutherford backscattering of helium ions in combination with RUMP computer simulation and the method of resonant nuclear reactions.

It has been established that during ion-assisted deposition of coatings based on chromium or titanium on silicon substrates, surface structures with a thickness of ∼100−150 nm are formed. The composition of the coating includes atoms of the deposited metal, atoms from the substrate (Si), atoms of technological impurities of oxygen, carbon, and hydrogen. The formed coatings contain ∼15–20 at. % hydrogen depending on the parameters of coating deposition. The source of atoms of technological impurities in the coating is the volatile fraction of the hydrocarbon vacuum oil of a diffusion steam-oil pump.

The concentration of hydrogen atoms in the formed structures decreases by ∼1.5–2 times during repeated scanning of samples with a beam of N+ analyzing ions in experiments using a resonant nuclear reaction, which is associated with the degassing of hydrogen atoms and its compounds, which are chemically weakly bonded to coating atoms.

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10.05.2022