THE EFFECT OF MAGNETOPLASMA PHENOMENA ON THE SUBMILLIMETER WAVES PASSAGE THROUGH SEMICONDUCTORS
UDC 537.633.2
Key words: millimeter waves, magnetoplasma reflection, carrier concentration, transmission coefficient.
For citation: Mad’yarov V. R. The effect of magnetoplasma phenomena on the submillimeter waves passage through semiconductors. Proceedings of BSTU, issue 3, Physics and Mathematics. Informatics, 2021, no 2 (248), pp. 53–57 (In Russian). DOI: https://doi.org/10.52065/2520-6141-2021-248-2-53-57.
Abstract
One of the ways to effectively control the transmission of a semiconductor in the frequency range of 50–300 GHz is to create a sufficiently large concentration of carriers in the volume of a semiconductor placed in a magnetic field using ionizing radiation. In this range some resonant frequencies exist at which the dielectric permittivity of the sample and the transmittance have extreme values. Magnetic plasma resonance can be achieved by changing the magnetic field or the intensity of external ionizing radiation. In this paper, the influence of the magnetic field and the intensity of the photoexcitation of a semiconductor (n-Si) on the transmittance of submillimeter waves is investigated. The dependences of the transmittance of submillimeter radiation on the photoexcitation flux density and magnetic field induction are obtained and analyzed. The observed attenuation of submillimeter radiation is explained by an increase in the density of the semiconductor plasma. It was found that the transmission coefficient of the thin layer has a minimum due to the coincidence of the frequency of the probing radiation with the frequency of the magnetoplasma resonance in the 75–200 GHz range. The effective attenuation of radiation was provided by varying transverse magnetic induction in the range of 0.4–0.6 T and the intensity of illumination. The results obtained can be used for developing semiconductor devices that control submillimeter wave energy flux by a magnetic field in combination with photoexcitation.
References
- Kats L. I., Altshuller Е. Yu, Chupis V. N. Reflection of an electromagnetic wave from thin semiconductor wafer with free carrier concentration nonuniformity controlled by impact ionization. Radiotekhnika i elektronika [Radio engineering and electronics], 1992, vol. 37, no. 4, pp. 560–566 (In Russian).
- Tsarev V. P., Antonov V. V., Ivanov S. V., Chupis V. N. Ultrahigh-speed photodetectors on the basis of interaction effects of microwave electromagnetic radiation with photoexcited plasma in semiconductors. Zhournal tekhnicheskoy fiziki [Journal of technical physics], 1998, vol. 68, no. 11, pp. 94–99 (In Russian).
3. Sirleto L., Irace A., Vitale G., Zeni L., Cutolo A. All optical multwavelength technique for the simultaneous measurement of bulk recombination lifetimes and front/rear surface recombination velocity in single crystal silicon samples. J. Appl. Phys., 2003, vol. 93, no. 6, pp. 3407–3413.
4. Chen F. X., Cui R. Q., L Xu L., Meng F. Y., Zhao Z. X. and Zhou Z. B. Separation of the bulk lifetime and surface recombination velocities in semiconductor wafer by a single microwave photoconductance. Semicond. Sci. and Technol, 2004, vol. 19, no. 9, pp. 959–963.
5. Bass F. G., Gurevich Yu. G. Goryachiye elektrony i sil’nyye elektromagnitnyye volny v plasme poluprovodnikov i gazovogo razryada [Hot electrons and strong electromagnetic waves in plasma of semiconductors and gas discharge]. Moscow, Nauka Publ., 1975. 400 p.
6. Zeeger K. Fizika poluprovodnikov [Physics of semiconductors]. Moscow, Mir Publ., 1977. 615 p.
